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STMicroelectronics STW32NM50N

STMicroelectronics

STW32NM50N


MOSFET N-Ch 500V 0.13 Ohm 22A MDmesh II FET

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$ 10.11

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Specification of STW32NM50N

Qg - Gate Charge 62.5 nC
Fall Time 23.6 ns
Configuration Single
Product Category MOSFET
Alternate Part No. 511-STW32NM50N
Manufacturer STMicroelectronics
Pd - Power Dissipation 190 W
Package/Case TO-247-3
Vgs th - Gate-Source Threshold Voltage 4 V
Rds On - Drain-Source Resistance 130 mOhms
Manufacturer Part No. STW32NM50N
Transistor Polarity N-Channel
Rise Time 9.5 ns
Id - Continuous Drain Current 13.86 A
Vgs - Gate-Source Breakdown Voltage 25 V
Packaging Tube
Vds - Drain-Source Breakdown Voltage 500 V
Mounting Style Through Hole
Series STW32NM50N
Brand STMicroelectronics
Typical Turn-Off Delay Time 110 ns

More info

STW32NM50N ST(SGS) ST Series Power MOSFET:Centenary Materials --New Products Purchase guide of electronic components -- there are more than forty ... [1]

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