STMicroelectronics STP260N6F6 View larger

STMicroelectronics STP260N6F6

STMicroelectronics

STP260N6F6


MOSFET N-Ch 60V 0.0016 Ohm 180A DeepGATE VI

$ 11.19

535 535 Items In Stock

Specification of STP260N6F6

Vgs - Gate-Source Breakdown Voltage 20 V
Pd - Power Dissipation 300 W
Fall Time 62.6 ns
Rds On - Drain-Source Resistance 2.4 mOhms
Packaging Tube
Manufacturer Part No. STP260N6F6
Qg - Gate Charge 183 nC
Transistor Polarity N-Channel
Package/Case TO-220-3
Alternate Part No. 511-STP260N6F6
Vds - Drain-Source Breakdown Voltage 75 V
Manufacturer STMicroelectronics
Brand STMicroelectronics
Id - Continuous Drain Current 120 A
Mounting Style Through Hole
Series STP260N6F6
Product Category MOSFET
Rise Time 165 ns
Vgs th - Gate-Source Threshold Voltage 4 V