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STMicroelectronics STP260N6F6



MOSFET N-Ch 60V 0.0016 Ohm 180A DeepGATE VI

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$ 10.68

535 535 Items In Stock

Specification of STP260N6F6

Vgs - Gate-Source Breakdown Voltage 20 V
Pd - Power Dissipation 300 W
Fall Time 62.6 ns
Rds On - Drain-Source Resistance 2.4 mOhms
Packaging Tube
Manufacturer Part No. STP260N6F6
Qg - Gate Charge 183 nC
Transistor Polarity N-Channel
Package/Case TO-220-3
Alternate Part No. 511-STP260N6F6
Vds - Drain-Source Breakdown Voltage 75 V
Manufacturer STMicroelectronics
Brand STMicroelectronics
Id - Continuous Drain Current 120 A
Mounting Style Through Hole
Series STP260N6F6
Product Category MOSFET
Rise Time 165 ns
Vgs th - Gate-Source Threshold Voltage 4 V

More info

STP260N6F6 - N-channel 60 V, 0.0024 Ohm, 120 A STripFET(TM) VI DeepGATE (TM) Power MOSFET in TO-220 package, STMicroelectronics, STP260N6F6. [1]

Find STMicroelectronics STP260N6F6 (497-11230-5-ND) at DigiKey. Check stock and pricing, view product specifications, and order online. [2]

Description. Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube. Design With Envision. Datasheet. View; Download. Specifications. EU RoHS. [3]

January 2012. Doc ID 17467 Rev 5. 1/14. 14. STI260N6F6. STP260N6F6. N- channel 60 V, 0.0024 Ω, 120 A STripFET™ VI DeepGATE™. Power MOSFET in ... [4]

STP260N6F6 datasheet, STP260N6F6 pdf, STP260N6F6 data sheet, datasheet, data sheet, pdf, ST Microelectronics, N-channel 60 V, 0.0024 Ohm, 120 A ... [5]

STP260N6F6 STMicroelectronics MOSFET N-Ch 60V 0.0016 Ohm 180A DeepGATE VI MOSFET Pricing and Availability. [6]