STMicroelectronics STP10NK60Z View larger

STMicroelectronics STP10NK60Z

STMicroelectronics

STP10NK60Z


MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH

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$ 4.30

428 428 Items In Stock

Specification of STP10NK60Z

Vds - Drain-Source Breakdown Voltage 600 V
Rds On - Drain-Source Resistance 750 mOhms
Transistor Polarity N-Channel
Vgs - Gate-Source Breakdown Voltage 30 V
Unit Weight 1.438 g
Channel Mode Enhancement
Minimum Operating Temperature - 55 C
Product Category MOSFET
Brand STMicroelectronics
Rise Time 20 ns
Qg - Gate Charge 50 nC
Mounting Style Through Hole
Fall Time 30 ns
Manufacturer Part No. STP10NK60Z
Configuration Single
Package/Case TO-220-3
Maximum Operating Temperature + 150 C
Typical Turn-Off Delay Time 55 ns
Series STP10NK60Z
Alternate Part No. 511-STP10NK60Z
Packaging Tube
Id - Continuous Drain Current 10 A
Pd - Power Dissipation 115 W
Forward Transconductance - Min 7.8 S
Manufacturer STMicroelectronics

More info

STP10NK60Z N-channel 600V - 0.65 Ohm - 10A TO-220/TO-220FP/D2PAK/ I2PAK/TO-247 Zener-protected Supermesh Power MOSFET. [1]

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