STMicroelectronics STGWT80H65DFB View larger

STMicroelectronics STGWT80H65DFB

STMicroelectronics

STGWT80H65DFB


IGBT Transistors Trench gate H series 650V 80A HiSpd

$ 9.44

148 148 Items In Stock

Specification of STGWT80H65DFB

Alternate Part No. 511-STGWT80H65DFB
Packaging Tube
Continuous Collector Current Ic Max 80 A
Configuration Single
Product Category IGBT Transistors
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Continuous Collector Current at 25 C 120 A
Mounting Style Through Hole
Power Dissipation 469 W
Brand STMicroelectronics
Collector-Emitter Saturation Voltage 1.6 V
Manufacturer STMicroelectronics
Maximum Gate Emitter Voltage +/- 20 V
Collector- Emitter Voltage VCEO Max 650 V
Package/Case TO-3P
Gate-Emitter Leakage Current 250 nA
Series STGWT80H65DFB
Manufacturer Part No. STGWT80H65DFB