STMicroelectronics BUL89 View larger

STMicroelectronics BUL89



Transistors Bipolar - BJT NPN Hi-Volt Fast Sw

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$ 5.45

599 599 Items In Stock

Specification of BUL89

Packaging Tube
Manufacturer STMicroelectronics
Transistor Polarity NPN
Emitter- Base Voltage VEBO 9 V
Collector- Emitter Voltage VCEO Max 400 V
Series BUL89
Collector- Base Voltage VCBO 850 V
Alternate Part No. 511-BUL89
Maximum Power Dissipation 110 W
Configuration Single
Product Category Transistors Bipolar - BJT
Continuous Collector Current 12 A
DC Collector/Base Gain hFE Min 10
Collector-Emitter Saturation Voltage 1 V
DC Current Gain hFE Max 40
Maximum Operating Temperature + 150 C
Package/Case TO-220-3
Minimum Operating Temperature - 65 C
Mounting Style Through Hole
Brand STMicroelectronics
Maximum DC Collector Current 12 A
Manufacturer Part No. BUL89

More info

The BUL89 is manufactured using high voltage. Multiepitaxial Mesa technology .... The ST logo is a trademark of STMicroelectronics. © 2001 STMicroelectronics ... [1]

ShenZhen Henlito Electronic Co.,Ltd exclusive dealing ST brand BUL89 Model No. [2]