STMicroelectronics BUL216 View larger

STMicroelectronics BUL216

STMicroelectronics

BUL216


Transistors Bipolar - BJT NPN Hi-Volt Fast Sw

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$ 2.76

1434 1434 Items In Stock

Specification of BUL216

Continuous Collector Current 4 A
DC Collector/Base Gain hFE Min 12
Configuration Single
Maximum Power Dissipation 90 W
Maximum Operating Temperature + 150 C
Brand STMicroelectronics
Collector- Base Voltage VCBO 1600 V
Transistor Polarity NPN
Product Category Transistors Bipolar - BJT
Collector-Emitter Saturation Voltage 1 V
Collector- Emitter Voltage VCEO Max 800 V
Minimum Operating Temperature - 65 C
Series BUL216
Mounting Style Through Hole
Maximum DC Collector Current 4 A
DC Current Gain hFE Max 40
Manufacturer Part No. BUL216
Package/Case TO-220-3
Manufacturer STMicroelectronics
Emitter- Base Voltage VEBO 9 V
Alternate Part No. 511-BUL216
Packaging Tube

More info

Počet položek: 20+ - BUL216 STMicroelectronics Bipolární tranzistory ... [1]

The BUL216 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to ... [2]

BUL216 datasheet, BUL216 circuit, BUL216 data sheet : STMICROELECTRONICS - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ... [3]

DESCRIPTION. The BUL216 is manufactured using high voltage. Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter. [4]

Find STMicroelectronics BUL216 (497-2638-5-ND) at DigiKey. Check stock and pricing, view product specifications, and order online. [5]

References